利用实验室自主开发的二维半导体器件-电路联合仿真器对RS触发器在核电磁脉冲注入下的烧毁情况进行研究，发现烧毁发生在RS触发器内n沟道增强型MOSFET栅极和漏极之间的沟道内。RS触发器烧毁的功率阈值随着脉冲宽度的增加而降低，当脉冲宽度大于80 ns后阈值变化很小。根据仿真结果，通过热传导方程对RS触发器的烧毁情况进行建模，得到了不同脉冲宽度核电磁脉冲注入下RS触发器烧毁功率阈值的理论模型，仿真结果证明了理论模型的正确性。

The burnout effect of RS flip-flops under the injection of HEMP is studied by using our two-dimensional mixed-mode circuit and semiconductor device simulator. The simulation results show that the burnout region is in the channel between gate and drain terminals in the n-channel enhancement mode MOSFETs of the RS flip-flop. The results also show that the power threshold for burnout decreases when the pulse width increases. The difference of the thresholds is not significant when the pulse width is larger than 80 ns. A theoretical model based on the simulation results and the heat equation to assess the relationship between pulse width and burnout threshold of RS flip-flops is proposed and the validity of the model is verified by the simulation results.