基于PIN二极管电热自洽耦合模型，构建了两级PIN限幅器高功率微波(HPM)效应电路模型。根据模拟模型设计加工了两级限幅器实验样品，限幅器输入、输出特性注入实验数据与模拟计算结果基本一致，验证了多级限幅器模型的有效性，表明该多级PIN限幅器模型能够应用于HPM效应模拟。针对不同HPM波形参数进行了HPM效应模拟，计算结果表明：随着注入功率的增大，脉宽增宽，前级厚I层PIN二极管结温升比后级薄I层PIN二极管结温升要高，因此厚I层PIN二极管更易受到损伤；而频率和前沿参数对结温升影响较小。

This paper constructs a two-stages PIN limiter with high power microwave(HPM) effect circuit model based on PIN diode electro-thermal self-consistent coupling model. According to the simulation model we design and fabricate two-stage PIN limiter experiment samples, the injected experimental data of input and output characteristics of limiter are basically identical to simulation results which have verified the effectiveness of the multi-stage limiter model and showed that multi-stage PIN limiter model established in this paper can be applied to HPM effect simulation. Simulated using different HPM waveform parameters for the HPM effect, the calculated results indicate that the junction temperature of pre-stage thick I layer PIN diode is higher than that of the post-stage thin I layer PIN diode with the increase of injected power and pulse width, so the thick I layer PIN diode is more susceptible to damage; the frequency and pulse rising time have less influence on junction temperature. Research results have a certain reference for HPM protection of PIN limiter.