强激光与粒子束, 2014, 26 (6): 065009, 网络出版: 2014-06-03  

GaAs PIN二极管电热特性

Electric thermal characteristics of GaAs PIN diodes
作者单位
1 电子物理与器件教育部重点实验室(西安交通大学), 西安 710049
2 西北核技术研究所, 西安 710024
摘要
通过T-CAD软件建立了PIN 二极管的电学模型和热学模型, 模拟了PIN 二极管的稳态与瞬态特性。研究了PIN 二极管器件在正反偏压和脉冲电压下的电学特性及热学特性, 讨论了PIN二极管的I层厚度与温度的关系, 模拟得到了不同I层厚度的稳态与瞬态响应曲线、得到了与器件内部温度的关系。模拟结果表明: 随着I层厚度的增加,器件内部最高温度增长减慢,器件内部最高温度区由结区位置向器件的中间位置移动。
Abstract
An electric thermal model of PIN diodes was established with the T-CAD software, the steady-state and transient characteristics of PIN diodes have been numerically investigated. The electric thermal properties of PIN diodes were simulated under pulse and stable signals with forward and reverse voltage biases respectively, and the effects of the thickness of the intrinsic layer on the temperature inside the diode were studied with their steady-state and transient response curves. The simulation results show that, when the thickness of intrinsic layer increases, the peak temperature inside the diode increases slowly and the position of the high-temperature region moves from the junction to the middle of the diode.

戚玉佳, 李永东, 周家乐, 王洪广, 李平, 刘纯亮. GaAs PIN二极管电热特性[J]. 强激光与粒子束, 2014, 26(6): 065009. Qi Yujia, Li Yongdong, Zhou Jiale, Wang Hongguang, Li Ping, Liu Chunliang. Electric thermal characteristics of GaAs PIN diodes[J]. High Power Laser and Particle Beams, 2014, 26(6): 065009.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!