High Power Laser Science and Engineering, 2014, 2 (2): 02000e11, Published Online: Jun. 4, 2014   

Splicing technology of Ti:sapphire crystals for a high-energy chirped pulse amplifier laser system Download: 841次

Author Affiliations
State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Abstract
We develop a splicing technology of Ti:sapphire crystals for a high-energy chirped pulse amplifier laser system that can suppress the parasitic lasing to improve the amplification efficiency compared to a large-size single Ti:sapphire crystal amplifier. Theoretical investigations on the characteristics of the amplifier with four splicing Ti:sapphire crystals, such as parasitic-lasing suppression and amplification efficiencies, are carried out. Some possible issues resulting from this splicing technology, including spectral modulation, stretching or splitting of the temporal profile, and the sidelobe generation in the spatial domain (near field and far field), are also investigated. Moreover, the feasibility of the splicing technology is preliminarily demonstrated in an experiment with a small splicing Ti:sapphire crystals amplifier. The temporal profile and spatial distribution of the output pulse from the splicing Ti:sapphire crystal amplifier are discussed in relation to the output pulse from a single Ti:sapphire crystal amplifier.

Yanqi Liu, Yuxin Leng, Xiaoming Lu, Yi Xu, Cheng Wang. Splicing technology of Ti:sapphire crystals for a high-energy chirped pulse amplifier laser system[J]. High Power Laser Science and Engineering, 2014, 2(2): 02000e11.

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