由于在日盲紫外探测方面的应用前景, 具有合适带隙的MgZnO合金半导体薄膜受到越来越多的关注。获得具有择优取向的单一相MgZnO对提升MgZnO基日盲紫外探测器性能至关重要。本文利用低压金属有机化学气相沉积(LP-MOCVD)方法在m面蓝宝石衬底上制备了一系列不同组分的MgxZn1-xO薄膜。光学和结构特性测试结果表明: Zn摩尔分数达到55%的Mg0.45Zn0.55O薄膜依然是单一立方相, 其光学带隙可以达到4.7 eV。立方岩盐结构MgZnO与m面蓝宝石衬底的外延结构关系为(110)MgZnO‖(1010)sapphire、［001］MgZnO‖［1210］sapphire和［110］MgZnO‖［0001］sapphire。唯一确定的面内取向有利于薄膜晶体质量的提高。基于(110)取向立方相Mg0.45Zn0.55O薄膜制备金属-半导体-金属(MSM)结构器件, 获得了光响应峰在260 nm、光响应截止波长278 nm的日盲紫外探测器。

A series of MgxZn1-xO alloy films were grown on m-plane sapphire by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Optical and structural characterizations indicated that the films with Zn mole fraction up to 55% are single-cubic-phased, and the optical bandgap of Mg0.45Zn0.55O film is 4.7 eV. The epitaxial relationships between substrate and rocksalt MgZnO layers were determined as (110)MgznO‖(1010)sapphire,［001］MgZnO‖［1210］sapphire, and ［110］MgZnO‖［0001］sapphire. The fixed uniform orientation of the films was accompanied by an improvement in crystal quality. A metal-semiconductor-metal structured solar-blind ultraviolet detector fabricated on Mg0.45Zn0.55O film showed a response peak at 260 nm and a sharp cutoff at 278 nm.