脉冲激光沉积(PLD)技术凭借其低温生长优势, 逐步在GaN薄膜外延领域得到广泛应用。回顾了近年来PLD技术外延生长GaN薄膜的研究进展, 包括新型衬底上的GaN薄膜外延研究进展, 以及作为克服异质外延的重要手段——缓冲层技术的发展现状。从目前的研究进展可以看出, 应用PLD技术制备GaN薄膜及其光电器件具有广阔的发展前景。

Pulse laser deposition (PLD) technique has been widely used in epitaxial growth of GaN films due to its advantage of lowtemperature growth. In this work, recent researches on the deposition of GaN grown by PLD are reviewed, including GaN films grown on novel substrates directly, as well as grown GaN films with buffer layer. According to the current research progresses, PLD used for the application of GaN films and GaNbased optoelectronic devices will bring up a broad prospect.