对工作波长为1310nm的大功率低噪声DFB激光芯片结构进行了优化设计。分别对具有相同非对称分别限制层(SCH)外延层的掩埋异质结构(BH)和脊波导结构(RWG)进行了建模仿真。计算结果表明: 非对称SCH结构较对称SCH结构, 可明显提高激光输出功率；相比于RWG结构, BH结构对载流子有更好的限制作用, 从而降低相对强度噪声(RIN)。优化设计后的DFB激光器输出功率高达207mW@600mA, 斜率效率为0.36W/A, 边模抑制比为50dB, 在1~30GHz范围内, 激光器的相对强度噪声小于-160dB/Hz。

Buried heterostructure(BH) and ridgewaveguide structure(RWG) with the same wafer structure were modeled and simulated. Compared to the symmetric separate confinement structure (SCH), asymmetric SCH can obviously improve the output power. BH structure can obtain better confinement of the injected carriers than the RWG structure, so as to lower the related intensity noise (RIN). The designed DFB laser obtains good performance with the output power of 207mW@600mA, slope efficiency of 0.36W/A, the side-mode suppression ratio of 50dB, and RIN less than -160dB/Hz in the range of 1~30GHz.