基于偏振双向反射分布函数,从理论上推导了瑞利缺陷粒子分别位于光学表面上方和基底内部的散射场, 研究了光学表面瑞利缺陷粒子的方位诊断问题.通过对不同波长下冗余缺陷粒子位于不同方位时双向反射分布函数pp项的分析与讨论实现对缺陷位置的初步判断.结果表明, SiO2瑞利缺陷粒子位于裸基底上方时, 双向反射分布函数pp项受波长影响的敏感程度远大于位于SiO2涂覆上方时, 可以通过测量缺陷粒子对波长变化的敏感程度判断缺陷粒子的大致方位；当缺陷粒子在Si基底下方时, 方位角的凹痕出现在85°到90°之间, 当缺陷粒子在SiO2涂层下方时, 方位角的凹痕出现在70°左右, 因此, 可以根据方位角凹痕位置的不同实现对缺陷粒子方位的进一步诊断.

Based on the polarized bidirectional reflectance distribution function ,the scattering fields of Rayleigh defect particle on the optical surface or inlay the substrate were derived to solve the diagnosis of the particle position. By analysis and discussion of bidirectional reflectance distribution function of pp about redundant defect particles with different wavelength , the positions of defect particles were identified preliminary. The results show that the sensing degree of wavelength with particles on the substrate is more than particles on the SiO2 coating. Therefore, the position of defect particle is judged by measuring the sensing degree of wavelength. The angle dent appears between 85° and 90° with the defect particles in the Si substrate, while the angle dent appears around 70° with the defect particles in the SiO2 coating. The angle dent is used to judge the particle position further in the project.