通过光刻和湿化学腐蚀工艺，成功制作出规格为2×8的多元锰钴镍氧薄膜红外探测器件.测试表明，室温下锰钴镍氧薄膜材料负电阻温度系数达-3.8%K-1.10Hz调制频率和±15V电压偏置条件下，线列器件典型探测元黑体响应率为107V/W，探测率为2×107cmHz1/2/W，8元器件响应不均匀度为5.9%.实验结果表明锰钴镍氧薄膜焦平面器件制备的可行性，有可能作为新型室温全波段探测器件得到应用.

The 2×8 element MnCoNiOdetector array was successfully fabricated with photolithography and wet-chemical etching process. It was shown that the negative temperature coefficient of resistance of the film reaches -3.8% K-1 at room temperature. The typical element of the fabricated detector array exhibits responsivity of about 107V/W and detectivity of about 2×107cmHz1/2/W respectively at bias voltage of ±15V and chopping frequency of 10Hz. The response uniformity of the linear array bolometers is about 5.9%. Our results proved the feasibility of MnCoNiOfilms for linear array bolometer applications, which can possibility be used as new-type uncooled bolometer detectors.