针对直接倒焊(Ⅰ型)、间接倒焊(Ⅱ型)两种红外探测器模块，两者中的探测器芯片、硅读出电路和引线基板的尺寸完全相同，只在倒焊封装结构上有所差异，用有限元方法分析比较了这两种封装形式的基本模块于液氮温度时的热应力和形变大小情况，分析结果与实验现象符合较好，模块低温形变值的测量验证了有限元分析结果的合理性.

For typeⅠand typeⅡ linear HgCdTe detector modules, the size of detector chip, Si-ROIC and sapphire electrical lead board in typeⅠmodule are exactly same as those in type Ⅱ module, while the hybrid architecture is different. The thermal stress distribution and warpage of these two modules at cryogenic temperature were analyzed by using finite element method(FEM). The FEM results are in good agreement with experimental phenomenon, and measurements of modules’ warpage at cryogenic temperature verify the rationality of simulated results.