Chinese Optics Letters, 2014, 12 (10): 102702, Published Online: Sep. 5, 2014
High-strain InGaAs/GaAs quantum well grown by MOCVD Download: 574次
350.3390 Laser materials processing 270.0270 Quantum optics 260.1180 Crystal optics 300.6470 Spectroscopy, semiconductors
Abstract
High-strain InGaAs/GaAs quantum wells (QWs) are grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Photoluminescence (PL) at room temperature is applied for evaluation of the optical property. The influence of growth temperature, V/III ratio, and growth rate on PL characteristic are investigated. It is found that the growth temperature and V/III ratio have strong effects on the peak wavelength and PL intensity. The full-width at half-maximum (FWHM) of PL peak increases with higher growth rate of InGaAs layer. The FWHM of the PL peak located at 1039 nm is 20.1 meV, which grows at 600 °C with V/III ratio of 42.7 and growth rate of 0.96 mm/h.
Gu Lei, Li Lin, Qiao Zhongliang, Kong Lingyi, Yuan Huibo, Liu Yang, Dai Yin, Bo Baoxue, Liu Guojun. High-strain InGaAs/GaAs quantum well grown by MOCVD[J]. Chinese Optics Letters, 2014, 12(10): 102702.