发光学报, 2014, 35 (9): 1098, 网络出版: 2014-09-15
高峰值功率808nm垂直腔面发射激光器列阵
High Peak Power 808 nm Vertical-cavity Surface-emitting Laser Array
摘要
为了实现808 nm垂直腔面发射激光器(VCSEL)的高功率输出, 对808 nm VCSEL的 分布式布拉格反射镜(DBR)结构材料进行了优化设计, 分析了AlxGa1-xAs材料中Al组分对于折射率与吸收的影响, 并最终确定了材料。采用非闭合环结构制备了2×2 VCSEL列阵。通过波形分析法对VCSEL列阵的功率进行了测量: 在脉冲宽度为20 ns、重复频率为100 Hz、注入电流为110 A的条件下, 最大峰值功率为30 W; 在脉冲宽度为60 ns、重复频率为100 Hz、注入电流为30 A的条件下, 最大功率为9 W。对列阵的近场和远场进行了测量, 激光器垂直发散角和水平发散角半高全宽分别为16.9°和17.6°。
Abstract
In order to achieve high output power of 808 nm vertical cavity surface emitting laser (VCSEL) array, the DBR material of 808 nm VCSEL was optimized, and Al content of AlxGa1-xAs was analyzed for the influence on refractive index and absorption. Based on the above analysis, 2 × 2 VCSEL array was designed and fabricated with non-closed ring structure. The peak power of the VCSEL array was tested under waveform analysis method. The peak power is 30 W in 60 ns pulse width and 100 Hz repetition rate, and 9 W in 20 ns pulse width and 100 Hz repetition rate, respectively. The near-field and far-field of VCSEL array were also measured. The beam divergences with full-width at half maximum are 16.9° and 17.6° in the vertical and lateral directions, respectively.
张金胜, 刘晓莉, 崔锦江, 宁永强, 朱洪波, 张金龙, 张星, 王立军. 高峰值功率808nm垂直腔面发射激光器列阵[J]. 发光学报, 2014, 35(9): 1098. ZHANG Jin-sheng, LIU Xiao-li, CUI Jin-jiang, NING Yong-qiang, ZHU Hong-bo, ZHANG Jin-long, ZHANG Xing, WANG Li-jun. High Peak Power 808 nm Vertical-cavity Surface-emitting Laser Array[J]. Chinese Journal of Luminescence, 2014, 35(9): 1098.