光学学报, 2014, 34 (11): 1131001, 网络出版: 2014-10-08
InGaAs/GaAs应变量子阱的发光特性研究
Research on Photoluminescence Properties of InGaAs/GaAs Strained Quantum Well
薄膜 金属有机化学气相沉积 InGaAs/GaAs单量子阱 生长速率 生长温度 光致发光 thin films metal-organic chemical vapor deposition InGaAs/GaAs single quantum well growth rate growth temperature photoluminescence
摘要
利用低压金属有机化学气相沉积技术(LP-MOCVD)生长InGaAs/GaAs单量子阱(SQW),通过改变生长速率、优化生长温度和V/III比改善了量子阱样品的室温光致发光(PL)特性。测试结果表明,当生长温度为600 ℃、生长速率为1.15 μm/h时,生长的量子阱PL谱较好,增加V/III比能够提高量子阱的发光强度。实验分析了在不同的In气相比条件下,生长速率对量子阱质量的影响,利用模型解释了高In气相比时,随着生长速率增加PL谱蓝移现象消失的原因。
Abstract
Strained InGaAs/GaAs single quantum wells (SQWs) are grown by the low pressure metal-organic chemieal vapor deposition (LP-MOCVD). The experimental results show that the photoluminescence (PL) emission of InGaAs/GaAs SQW can be greatly improved by optimizing the growth rate, V/III ratio and temperature. It is found that the QW structures grown at the growth temperature of 600 ℃ and the growth rate of 1.15 μm/h exhibit better PL emission, stronger PL intensity with higher V/III ratio. The reason why the blue shift phenomenon of PL spectrum disappear when the InGas ratio is higher is explained by a model.
戴银, 李林, 苑汇帛, 乔忠良, 孔令沂, 谷雷, 刘洋, 李特, 曲轶, 刘国军. InGaAs/GaAs应变量子阱的发光特性研究[J]. 光学学报, 2014, 34(11): 1131001. Dai Yin, Li Lin, Yuan Huibo, Qiao Zhongliang, Kong Lingyi, Gu Lei, Liu Yang, Li Te, Qu Yi, Liu Guojun. Research on Photoluminescence Properties of InGaAs/GaAs Strained Quantum Well[J]. Acta Optica Sinica, 2014, 34(11): 1131001.