发光学报, 2014, 35 (10): 1205, 网络出版: 2014-10-23
具有电子阻挡层的2μm InGaAsSb/AlGaAsSb 量子阱激光器
2μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer
2μm半导体激光器 电子阻挡层 阈值电流 特征温度 2μm semiconductor lasers electron stopper layer threshold current characteristic temperature
摘要
为了降低2 μm InGaAsSb/AlGaAsSb 量子阱激光器的阈值电流并获得良好的温度特性, 在p型波导层及限制层之间引入AlGaAsSb电子阻挡层。采用理论计算方法模拟了电子阻挡层对 InGaAsSb/AlGaAsSb LD输出特性的影响。研究结果表明: 电子阻挡层结构可有效减少2 μm InGaAsSb/AlGaAsSb 量子阱激光器的Auger复合, 抑制量子阱中导带电子向p型限制层的溢出, 降低器件的阈值电流, 同时改善了温度敏感特性。
Abstract
In order to reduce the threshold current and obtain the good temperature characteristics of 2 μm InGaAsSb/AlGaAsSb diode laser, AlGaAsSb electronic stopper layer (ESL) was introduced between p-waveguide and p-cladding layer. The research was conducted by LASTIP. The simulated results reveal that ESL can reduce the threshold current and improve the temperature characteristics of LD effectively. All the advantages are due to the lower Auger recombination rate in the quantum wells and smaller electron concentrations in the p-side, which are caused by the higher band offset between ESL and p-waveguide.
安宁, 刘国军, 李占国, 常量, 魏志鹏, 马晓辉. 具有电子阻挡层的2μm InGaAsSb/AlGaAsSb 量子阱激光器[J]. 发光学报, 2014, 35(10): 1205. AN Ning, LIU Guo-jun, LI Zhan-guo, CHANG Liang, WEI Zhi-peng, MA Xiao-hui. 2μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer[J]. Chinese Journal of Luminescence, 2014, 35(10): 1205.