发光学报, 2014, 35 (10): 1215, 网络出版: 2014-10-23
基于CdSe/ZnS核壳量子点薄膜的荧光温度传感器
Fluorescence Temperature Sensor Based on CdSe/ZnS Core-shell Quantum Dots Thin Film
摘要
设计了基于CdSe/ZnS核壳量子点薄膜发光谱温变特性的温度传感器。在30~160 ℃温度范围内, CdSe/ZnS核壳量子点的光致荧光(PL)谱随温度呈现规律性变化。温度升高时, PL谱自参考峰值强度减小、峰值波长增大、半峰全宽增大;而且PL谱自参考峰值强度、峰值波长和半峰全宽温变特性分别非常符合一次、一次和二次拟合函数关系, 其对应的相关性指数R2均达到96.6%以上;PL谱峰值波长温变灵敏度达到0.06 nm/℃, 分辨率约为0.1 ℃。同时, 采用PL谱自参考峰值强度比单纯的PL谱峰值强度更具有温度测量稳定性和精确性。
Abstract
A temperature sensor based on the temperature characteristics of photoluminescence (PL) of CdSe/ZnS core-shell quantum dots (QDs) thin film was designed and fabricated. The results show that PL of CdSe/ZnS QDs thin film changes regularly with the temperature increasing in the range of 30~160 ℃. The self-reference peak intensity of PL decreases with the temperature increasing, while their peak wavelength and full width at half maximum (FWHM) increase. Moreover, the temperature characteristics of self-reference peak intensity, peak wavelength, and FWHM are respectively obtained by fitting one, one and two times fitting function relations. The corresponding correlation indexes R2 are all above 96.6%. The temperature sensitivity of peak wavelength is 0.06 nm/℃, and the resolution is about 0.1 ℃. Besides, the temperature detecting by self-reference peak intensity is more stable and accuracy than that only by peak intensity.<英文关键temperature sensor;self-reference peak intensity;peak wavelength;FWHM;CdSe/ZnS quantum dots 词>
陈中师, 王河林, 隋成华, 魏高尧, 耿琰. 基于CdSe/ZnS核壳量子点薄膜的荧光温度传感器[J]. 发光学报, 2014, 35(10): 1215. CHEN Zhong-shi, WANG He-lin, SUI Cheng-hua, WEI Gao-yao, GENG Yan. Fluorescence Temperature Sensor Based on CdSe/ZnS Core-shell Quantum Dots Thin Film[J]. Chinese Journal of Luminescence, 2014, 35(10): 1215.