激光与光电子学进展, 2014, 51 (12): 122303, 网络出版: 2014-11-26
GaN基光子晶体发光二极管的优化设计 
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Optimizing Design for GaN-Based Light Emitting Diodes with Photonic Crystal Slab
光学器件 发光二极管 时域有限差分法 光子晶体 光子禁带 optical devices light emitting diode finite-difference time-domain method photonic crystal photonic band gap
摘要
构建了基于空气孔型GaN 平板光子晶体(PC)的层状发光二极管(LED)模型。基于平面波展开方法，得到了空气孔型平板光子晶体的能带结构，分析了空气孔半径对禁带宽度的影响，得出最大禁带宽度约为21.5%。设置电偶极子位于GaN 介质层的中心，并在x-y 平面内极化，辐射源采用高斯形脉冲，波长取为450 nm，采用三维的时域有限差分法计算LED 的出光效率，讨论了平板光子晶体的厚度和空气孔的半径对层状LED 的相对出光效率的影响，结果表明：存在最优结构参数值获得最高的相对出光效率，其值约为2。
Abstract
Layered light-emitting diode (LED) of GaN photonic crystal (PC) with periodic air holes is studied. Photonic band structures of the photonic crystal are obtained by plane-wave expansion method. The effects of air-hole radius on band gaps are analyzed, and the results show that the widest band gap is 21.5%. A point dipole polarized in the x-y plane is located in the center of the second GaN layer and is excited by a Gaussian pulse profile for the wavelength of 450 nm. Based on the three-dimensional finite-difference time-domain method, extraction efficiency of the LED is obtained. The effects of the PC thickness and air-hole radius on relative extraction efficiency of layered GaN-LED are analyzed. The results show that the maximum relative extraction efficiency of 2 can be obtained with the optimal structural parameters.
刘丹, 童爱红, 肖明, 王筠, 胡森. GaN基光子晶体发光二极管的优化设计[J]. 激光与光电子学进展, 2014, 51(12): 122303. Liu Dan, Tong Aihong, Xiao Ming, Wang Yun, Hu Sen. Optimizing Design for GaN-Based Light Emitting Diodes with Photonic Crystal Slab[J]. Laser & Optoelectronics Progress, 2014, 51(12): 122303.
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