发光学报, 2014, 35 (12): 1427, 网络出版: 2014-12-08  

非桥氧空穴发光中心对铁钝化多孔硅光致发光的影响

Effect of Non-bridging Oxygen Hole Luminescence Center on Photoluminescence of Iron-passivated Porous Silicon
作者单位
1 闽南师范大学 物理与信息工程学院, 福建 漳州363000
2 闽南师范大学 化学与环境学院, 福建 漳州363000
摘要
采用水热腐蚀法制备了铁钝化多孔硅样品, 样品光致发光谱的荧光峰位于2.0 eV附近, 半峰宽约为0.40 eV。激发波长从240 nm增大到440 nm的过程中, 荧光峰先红移再蓝移, 最后基本稳定, 变化曲线呈勺型。通过分析15片发光多孔硅样品的统计结果, 发现荧光峰逆转所对应的激发波长位于330 nm附近, 相应的激发光子能量约为3.8 eV。样品光致发光谱随激发波长的勺型变化过程与≡Si—O↑和≡Si—O↑…H—O—Si≡两类非桥氧空穴发光中心共同作用时的发光行为一致。
Abstract
Hydrothermal etching method was employed to prepare iron-passivated porous silicon (IP-Si) samples with peak energy around 2.0 eV and FWHM of 0.40 eV. As the excitation wavelength increases from 240 to 440 nm, the peak energy of photoluminescence red-shifts first, and then blue-shifts before it reaches a constant energy. The changing curve demonstrates a spoon-like pattern. By analyzing the statistics results from 15 IP-Si samples, it is found that the turnover excitation wavelength corresponding to the peak energy is about 330 nm and the related photon energy is 3.8 eV. The spoon-like relationship found between the peak energy and excitation wavelength is in good agreement with the photoluminescence behavior under the combined action of two types of non-bridging oxygen hole center of ≡Si—O↑ and ≡Si—O↑…H—O—Si≡.

陈景东, 张婷, 方玉宏. 非桥氧空穴发光中心对铁钝化多孔硅光致发光的影响[J]. 发光学报, 2014, 35(12): 1427. CHEN Jing-dong, ZHANG Ting, FANG Yu-hong. Effect of Non-bridging Oxygen Hole Luminescence Center on Photoluminescence of Iron-passivated Porous Silicon[J]. Chinese Journal of Luminescence, 2014, 35(12): 1427.

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