发光学报, 2014, 35 (12): 1469, 网络出版: 2014-12-08
基于Sb2O3/Ag/Sb2O3叠层透明导电薄膜的自组装沟道透明薄膜晶体管
Self-assembled Channel Transparent Thin-film Transistors Based on Sb2O3/Ag/Sb2O3 Multilayer Transparent Conductive Films
透明导电薄膜 Sb2O3/Ag/Sb2O3叠层 自组装沟道 透明薄膜晶体管 transparent conductive film Sb2O3/Ag/Sb2O3 multilayer self-assembled channel transparent thin- film transistors
摘要
首次利用Sb2O3/Ag/Sb2O3 (SAS) 叠层透明导电薄膜作为透明电极, 并采用衍射自组装沟道的方法研制了一种透明薄膜晶体管。通过一次掩模工艺, 在电子束热蒸发过程中的SAS源漏电极之间制作沟道层。SAS透明导电薄膜具有优异的光电性能。研制的透明薄膜晶体管具有良好的器件性能, 其迁移率高达11.36 cm2/(V·s)。整个器件在可见光范围内的平均透过率为80%。结果表明, 这种透明薄膜晶体管有希望应用于低成本透明光电子产品中。
Abstract
A fabrication method of transparent thin-film transistors based on Sb2O3/Ag/Sb2O3 (SAS) multi-layer transparent conductive film is developed by self-assembling diffraction. A self-assembled channel between SAS source/drain electrodes was formed by electron beam thermal evaporation in the one-shadow-mask process. The multi-layer transparent conductive film has desirable photoelectrical properties. Consequently, we obtained high performance devices with mobility of 11.36 cm2/(V·s) and an average visible range transmittance of 80%. Our results demonstrate that such transparent device is promising for low-cost optoelectronic product.
张楠, 刘星元. 基于Sb2O3/Ag/Sb2O3叠层透明导电薄膜的自组装沟道透明薄膜晶体管[J]. 发光学报, 2014, 35(12): 1469. ZHANG Nan, LIU Xing-yuan. Self-assembled Channel Transparent Thin-film Transistors Based on Sb2O3/Ag/Sb2O3 Multilayer Transparent Conductive Films[J]. Chinese Journal of Luminescence, 2014, 35(12): 1469.