利用MBE的方法在晶格失配的GaAs衬底上制备了新型红外探测材料InAs0.07Sb0.93薄膜。并利用电子束刻蚀的方法在InAs0.07Sb0.93薄膜表面进行了电极的制备。使用标准黑体及傅里叶红外光谱仪对制备成的光电导器件的黑体响应、暗电流以及光电流谱进行了测试, 结果表明, 所制备的红外探测器获得了响应峰值为4μm、响应半峰宽为4μm的中波宽带响应。

The new infrared material InAs0.07Sb0.93 thin films were prepared on lattice mismatched GaAs substrate with the method of Molecular Beam Epitaxy (MBE). Then electrodes were prepared on the InAs0.07Sb0.93 film by using electron beam lithography. The blackbody response, dark current and photocurrent of the prepared photoconductive device were measured with blackbody and fourier transform infrared spectroscopy. A wide-band infrared detector with the response peak at around 4μm and FWHM of 4μm is obtained.