提出一种用于强电场测量的集成光波导电场传感器天线电极设计方案。给出了传感器等效电路, 计算分析了天线、电极的各个参数对传感器半波电场的影响。结果表明: 当传感器电极长度、天线长度由4mm减少到0.5mm时, 传感器半波电场由230kV/m分别增加到2400kV/m和1100kV/m, 提高了943.5%和378.3%;当电极间距、电极宽度由20μm增加到200μm时, 传感器半波电场由400kV/m分别增加为2300kV/m和730kV/m, 提高了475.0%和82.5%;当天线底部宽度由50μm增加到600μm时, 传感器半波电场由460kV/m减小到242kV/m, 减小了47.4%。因此, 合理设计传感器电极、天线尺寸可使其半波电场达到几百kV/m至几千kV/m, 使它能够应用于强电场测量领域。

A design scheme for the antenna and electrode of the intense integrated optical waveguide sensor is proposed in this paper. Based on the equivalent circuit of the sensor, influences of the parameters of the antenna and electrode on the half-wave electric field (Eπ) were calculated and analyzed. The results suggest that as the length of the electrode and antenna decreasing from 4mm to 0.5mm, Eπ will increase from 230kV/m to 2400kV/m and 1100kV/m respectively. As the gap and width of the electrode increase from 20μm to 200μm, Eπ will increase from 400kV/m to 2300kV/m and 730kV/m respectively. As the bottom width of the antenna increases from 50μm to 600μm, Eπ will decrease from 460kV/m to 242kV/m. Accordingly, based on a rational design of the antenna and electrode dimensions, the sensor can realize a Eπ of several hundreds or even thousands of kV/m, which is appropriate to be used to detect the intense electric field.