对GaAs基半导体激光器真空解理钝化工艺进行了研究, 发现在高真空条件下解理和钝化GaAs基半导体激光器能有效减少激光器腔面缺陷, 从而抑制非辐射复合。通过测试光致发光(PL)谱线和X射线光电子能谱(XPS)发现, 经过超高真空解理钝化的GaAs基半导体激光器bar条的光致发光特性比没有经过真空解理钝化获得比较大的提升, 并且bar条表面污染率有很大改观。对真空解理钝化工艺的钝化膜的厚度进行了优化。

A cleavage and passivation process in high vacuum for bars of GaAs semiconductor laser was investigated. The treatment for bars can decrease the facet defect effectively, so as to restrain nonradiative recombination. Measurements on their PL and XPS show that the PL characteristics of the bars on GaAs which are cleaved and passivated in high vacuum are greatly improved than that of the ones cleaved in the air, and also the thickness of the passivation film for vacuum cleavage passivation process is optimized.