对基于不改造应用于显示技术的曝光设备而提高光刻解像力进行研究。用半导体工艺模拟及器件模拟软件模拟分析了离焦量为0时, 两种相位移掩膜和传统掩膜下4 μm/2 μm等间隔线的光强分布。并根据设备参数模拟分析离焦量为15、30 μm时通过掩膜得到的光刻间距情况, 最后实际比较测量了两种相位移掩膜在相同条件下各自曝光剂量范围和切面微观图。实验结果表明: 自准直式边缘相移掩膜相比无铬相移掩膜在产能和良率方面更有优势。自准直式边缘相移掩膜更适合显示技术光刻细线化量产使用。

Improvement of photolithographic resolution based on no modification of MPA exposure equipment is investigated in the paper. Firstly, comparison is conducted between the intensity distributions results of equidistant lines (line/space=4 μm/2 μm) of the conventional binary mask and two types of PSM (phase shift mask) when defocus is zero by software simulation. Then defocus dependency is obtained by simulation analysis according to the MPA equipment parameters. Finally, exposure latitude and SEM profile of the rim PSM and single PSM in the same condition is compared. Experimental results indicate that rim PSM has more advantages than single PSM in terms of capacity and yield. Thus it is concluded that rim PSM is more suitable for mass production to improve photolithographic resolution of display technology.