针对远距离激光传能及光电转换问题，通过对传输过程中光纤损耗、 波长选择、光电转换材料匹配等影响系统传输效率的各环节因素进行分析，采用在半绝缘InP 衬底上外延生长InGaAs PIN的方式设计了光电转换芯片，并对芯片结构及互联工艺进行了优 化，最终成功研制出了高效激光能量转换器。试验结果表明，在1550 nm激光照射的 条件下，该激光能量转换器的光电转换效率能够达到28%。

To achieve long distance fiber energy transmission and laser conversion, various factors which have influence on the transmission efficiency of a system in the process of energy transmission, such as fiber loss, wavelength selection, matching of photoelectric materials, are analyzed. A photovoltaic conversion chip is designed by growing a InGaAs PIN structure on a semi-insulating InP substrate epitaxially. The structure and interconnect technology of the chip are optimized. Finally, a highly efficient laser energy converter is developed successfully. The test result shows that the laser energy converter has its photoelectric energy conversion efficiency of 28% under the laser illumination at 1550 nm wavelength.