采用脉冲激光沉积(PLD)方法在湿法腐蚀后的Si(100)衬底上制备了Y2O3∶Bi,Yb减反转光薄膜。所制备的薄膜在300～800 nm波长范围内的平均反射率最低至5.28%, 同时在晶体硅太阳能电池最佳响应范围内的980 nm附近表现出了良好的下转光特性。与非减反下转光薄膜相比较, 具有减反结构的Y2O3∶Bi,Yb下转换薄膜的转光强度有了明显的提升。随着衬底腐蚀时间在一定范围内的延长, Bi3+和Yb3+的发射峰强度线性增大。该减反转光薄膜为太阳能电池效率提高提供了一种简单可行的方法。

Bi3+, Yb3+ co-doped Y2O3 down-conversion film has been prepared by the pulse laser deposition technique on Si(100) substrate with the way of metal-assisted wet etching. The average reflectance of the film has a minimum value of 5.28% in the visible region from 300 to 800 nm. Under 311 nm excitation, the film can emit 980 nm light which is in the best response range to crystalline silicon solar cells. Compared to the film without anti-reflection structure that we have done before, the film with anti-reflection structure has the higher PL intensity. With the increasing of the etching time, the emission intensities of Bi3+ and Yb3+ increase monotonically. The enhancing light conversion performance by using anti-reflection structure will provide a simple method to the light conversion films which can be used in enhancement of energy efficiency for crystalline Si solar cells.