对新月形超辐射发光二极管的液相外延生长过程进行了机理分析。利用Matlab软件对建立的非平面生长模型进行了理论计算, 并利用扫描电镜(SEM)对液相外延生长的形貌进行了分析, 通过理论计算与实验分析设计了获得低偏振、高功率超辐射发光二极管的外延结构。利用该结构研制的超辐射发光二极管芯片在100 mA工作电流、25 ℃工作温度下输出功率达到3.6 mW, 相应的输出波长为1 306 nm, 光谱半宽为39 nm, 光谱波纹为0.17 dB,偏振度为2%。

Theoretical analyses of growing processes were made in the case of superluminesecnt diode with crescent structure by liquid phase epitaxy (LPE), which could perfectly explain some phenomena in experiments of LPE on curved InP surfaces. The results of numerical calculation were consistent with the experimental results. The epitaxy structure was optimized to enhance the output power and reduce the polarization of the SLD. As a result, polarization dependence as low as 2% and 3.6 mW output power were obtained at 100 mA and 25 ℃ heat-sink temperature, corresponding to 39 nm spectral width with spectral modulation of less than 0.17 dB.