三片具有不同载流子浓度的n型6H-SiC体材料用于83 K到673 K的变温拉曼散射研究，能够得到变温的拉曼散射模。通过测量可以得到,随着温度的增长,不同的声子散射模的拉曼峰逐渐变小。运用声子频率的温度特性计算公式,对三片样品的三个声子模的峰位进行拟合能够得到很好的拟合结果。6H-SiC样品的纵光学声子模(LOPC)的拉曼位移像其他的拉曼模一样,随着温度的增加而变小。在较高的温度时所有的声子模明显展宽。

Three n-type 6H-SiC bulk wafers with different free carrier concentration were studied by Raman scattering in temperature varying from 83 K to 673 K. The temperature dependent Raman phonon modes can be obtained. These measurements reveal that Raman peaks of different phonon scattering modes show down shift when the temperature increases. Peak positions of three phonon modes in the spectra of three samples at different temperature are fitted by temperature dependent of phonon frequency formula. Raman shift of longitudinal optical-plasma coupling (LOPC) mode from 6H-SiC samples decreases with temperature increasing like other Raman modes. At high temperature, all active phonon modes clearly become broader.