Chinese Optics Letters, 2015, 13 (s1): S12203, Published Online: Jan. 27, 2015  

SEM observation and Raman analysis on 6H–SiC wafer damage irradiated by nanosecond pulsed Nd:YAG laser

Author Affiliations
1 Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, China
2 Jilin University, Changchun 130025, China
Abstract
Silicon carbide (SiC) is a wide bandgap semiconductor which exhibits outstanding mechanical, chemical properties, and potential for a wide range of applications. Laser technology is being established as an -indispensable powerful tool to induce structural or morphological modifications on hard brittle materials. SiC (6H-SiC wafer) is irradiated by nanosecond pulsed Nd:YAG laser to evaluate microstructure and mechanical properties of irradiation areas. Raman spectroscopy analysis reveals that irradiations produce homonuclear Si-Si bonds and disordered phase of crystalline SiC. Crystal structure changes are observed as a consequence of laser-induced melting and resolidification. Hardness in the irradiation area exhibits a significant decrease. The formation of silicon film facilitates material removal rate, surface electrical conductivity, and ceramics conjunction.

Zhiyu Zhang, Yang Xu, Binzhi Zhang. SEM observation and Raman analysis on 6H–SiC wafer damage irradiated by nanosecond pulsed Nd:YAG laser[J]. Chinese Optics Letters, 2015, 13(s1): S12203.

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