首页 > 论文 > 红外与毫米波学报 > 34卷 > 1期(pp:23-28)

利用ICPCVD方法在GaN上沉积氧化硅薄膜的特性

Characterization of silicon oxide film grown on GaN deposited by ICPCVD

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

摘要

使用感应耦合等离子体化学气相沉积(Inductively coupled plasma chemical vapor deposition, ICPCVD)方法在GaN上沉积SiOx薄膜, 生长参数中采用不同RF功率, 研究RF功率对薄膜物理性能和电学性能的影响.结果发现, 随着RF功率增大, 薄膜应力增大, 表面粗糙度减小, 薄膜致密度增大.选择最优的RF功率参数, 制作了SiOx/n-GaN金属-绝缘体-半导体(metal-insulator-semiconductor, MIS)器件, 结果得到薄膜漏电流密度在外加偏压为90V时小于1×10-7A/cm2, SiOx/n-GaN界面态密度为2.4×1010eV-1cm-2.表明利用ICPCVD低温沉积的SiOx-GaN 界面态密度低, 薄膜绝缘性能良好.

Abstract

Silicon oxide(SiOx) films on GaN were synthesized at 75℃, using the inductively coupled plasma chemical vapor deposition(ICPCVD) with different radio-frequency chuck power(RF power). The physical and electrical properties of the deposited SiOx thin films were characterized by various methods. It is found that as the RF power increased, the films’ stress increased while the surface roughness and the film density increased. With optimized RF power, the SiOx/n-GaN metal-insulator-semiconductor(MIS) structures were fabricated. The electrical properties of the SiOx films were investigated by current density-voltage(J-V) and capacitance-voltage(C-V) measurements. The results show that the leakage current density is lower than 1×10-7A/cm2 at 90V, the minimum interface state density is 2.4×1010eV-1cm-2, indicating good electrical properties of ICPCVD deposited SiOx films.

Newport宣传-MKS新实验室计划
补充资料

中图分类号:TN23

DOI:10.3724/sp.j.1010.2015.00023

基金项目:国家自然科学基金资助项目(61204134)

收稿日期:2013-08-28

修改稿日期:2014-10-08

网络出版日期:--

作者单位    点击查看

刘秀娟:中国科学院上海技术物理研究所 传感技术国家重点实验室, 上海 200083中国科学院研究生院, 北京 100039
张燕:中国科学院上海技术物理研究所 传感技术国家重点实验室, 上海 200083
李向阳:中国科学院上海技术物理研究所 传感技术国家重点实验室, 上海 200083

联系人作者:刘秀娟(blueskynju@163.com)

备注:刘秀娟(1989-), 女, 甘肃天水人, 博士, 主要从事AlGaN日盲紫外探测器的研究工作.

【1】KARCHER R, LEY L, JOHNSON R L, et al. Electronic-structure of hydrogenated and unhydrogenated amorphous SiNx: a photoemission study [J]. Phys. Rev. B, 1984, 30(4): 1896-1910.

【2】REBIB F, TOMASELLA E, DUBOIS M, et al. SiOxNythin films deposited by reactive sputtering: Process study and structural characterisation [J]. Thin Solid Films, 2007, 515(7-8): 3480-3487.

【3】TOIVOLA Y, THURN J, COOK R F, et al. Influence of deposition conditions on mechanical properties of low-pressure chemical vapor deposited low-stress silicon nitride films [J]. J. Appl. Phys, 2003, 94(10): 6915-6922.

【4】ZAMBOM L D, MANSANO R D, FURLAN R. Silicon nitride deposited by inductively coupled plasma using silane and nitrogen [J]. Vacuum, 2002, 65(2): 213-220.

【5】LEE J W, MACKENZIE K D, JOHNSON D, et al. Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition [J]. J. Electrochem. Soc., 2000, 147(4): 1481-1486.

【6】ZHAO Yong-Jun, WANG Min-Juan, YANG Yong-Jun. Study on stress of PECVD SiNx film [J]. Chinese journal of semiconductors(赵永军, 王民娟, 杨拥军.PECVD SiNx薄膜应力的研究.半导体学报),1999, 20(3): 183-187.

【7】SUN Jun-Feng, SHI-Xia. Study of internal stress in PECVD SiO2 thin films [J]. Process technique and materials(孙俊峰, 石霞. PECVD SiOx薄膜内应力的研究.工艺技术与材料), 2008, 33(5): 397-400.

【8】XU Q, RA Y, BACHMAN M, et al. Characterization of low-temperature silicon nitride films produced by inductively coupled plasma chemical vapor deposition [J]. J.Vac.Sci.Technol.A, 2009, 27(1): 145-156.

【9】TSAI S Y, LU Y M, HON M H, et al. Study on the low leakage current of an MIS structure fabricated by ICP-CVD(C), Journal of Physics: Conference series 100, 2008, 042030.

【10】KSHIRSAGAR A, NYAUPANE P, BADAS D, et al. Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD [J]. Appl. Surf. Sci., 2011, 257(11): 5052-5058.

【11】PARK B R, LEE J G, CHOI W, et al. High-quality ICPCVD SiO2 for normally off AlGaN/GaN-on-Si recessed MOSHFETs [J]. IEEE Electron Device Lett., 2013, 34(3): 354-356.

【12】HUANG-Jin. Research on separation of GaN LED films by laser lift-off[D]. Xia-Men: Xiamen University(黄瑾,GaN LED器件外延膜的激光剥离的研究.厦门大学), 2009.

【13】HASHIZUME T, OOTOMO S, INAGAKI T, et al. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors [J]. J. Vac. Sci. Technol. B, 2003, 21(4): 1828-1838.

【14】HONG M, ANSELM K A, KWO J, et al. Properties of Ga2O3(Ga2O3)/GaN metal-insulator-semiconductor diodes [J]. J. Vac. Sci. Technol. B, 2000, 18(3): 1453-1456.

【15】ARULKUMARAN S, EGAWAg T, ISHIKAWA H, et al. Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density [J]. Appl. Phys. Lett., 1998, 73(6): 809-811.

引用该论文

LIU Xiu-Juan,ZHANG Yan,LI Xiang-Yang. Characterization of silicon oxide film grown on GaN deposited by ICPCVD[J]. Journal of Infrared and Millimeter Waves, 2015, 34(1): 23-28

刘秀娟,张燕,李向阳. 利用ICPCVD方法在GaN上沉积氧化硅薄膜的特性[J]. 红外与毫米波学报, 2015, 34(1): 23-28

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF