中国激光, 2015, 42 (4): 0406002, 网络出版: 2015-03-25  

掺C高阻GaN的MOCVD外延生长

Growth of the C-Doped High Resistance GaN by MOCVD
作者单位
1 北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室, 北京 100124
2 中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室, 江苏 苏州 215123
摘要
利用金属有机物化学气相沉积(MOCVD)技术在蓝宝石衬底上制备了GaN∶C 薄膜。为得到高阻(或半绝缘)的GaN 薄膜,研究了源(CCl4)流量和载气对MOCVD 外延GaN 薄膜电学性能的影响,发现CCl4流量和载气对实现高阻的GaN 影响很大。当GaN 缓冲层采用N2作为载气,CCl4的流量为0.016 μmol/min 时成功实现了GaN 的高阻生长,样品A2的方块电阻高达2.8×107 Ω/sq。经原子力显微镜(AFM)测试显示,样品的表面形貌较好,粗糙度均在0.3 nm 附近,说明C掺杂对外延GaN 薄膜的表面形貌没有大的影响。低温荧光光谱测试显示黄光峰与刃型位错有关。
Abstract
GaN∶C films are grown on sapphire by metal-organic chemical vapor deposition (MOCVD) with different carrier gas and different CCl4 source flux. To get a high resistance (or semi-insulating) GaN, the electrical properties of GaN films influenced by CCl4 flux and carrier gas are investigated. The results show that the CCl4 flux and carrier gas influence the growth of high resistance GaN greatly. The sample A2 gets the highest sheet resistance (2.8 × 107 Ω/sq) with the CCl4 flux of 0.016 mmol/min and N2 used as the carrier gas. The atomic force microscope (AFM) test show that the samples have a flat surface morphology, the roughness is around 0.3 nm. Meanwhile, it also show that the doping C has little influence on the surface morphology. The low temperature photoluminescence (LTPL) test show that the yellow luminescence is related with edge dislocation.

钟林健, 邢艳辉, 韩军, 王凯, 朱启发, 范亚明, 邓旭光, 张宝顺. 掺C高阻GaN的MOCVD外延生长[J]. 中国激光, 2015, 42(4): 0406002. Zhong Linjian, Xing Yanhui, Han Jun, Wang Kai, Zhu Qifa, Fan Yaming, Deng Xuguang, Zhang Baoshun. Growth of the C-Doped High Resistance GaN by MOCVD[J]. Chinese Journal of Lasers, 2015, 42(4): 0406002.

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