利用磁控溅射系统,N2和Ar作为溅射气体,生长N掺杂ZnO薄膜.溅射气氛中氮气流量分别为0,8,20,32 mL/min,通过改变氮气的流量,研究薄膜性能的变化.结果发现,随着溅射气氛中氮气流量的增加,薄膜的电阻率增加,薄膜中NO与(N2)O的掺杂浓度同时在变大.当氮气流量为8 mL/min时,N的有效掺杂效率最高.另外,随着溅射气氛中氮气流量的增加,薄膜的厚度在减小.

Using radio frequency magnetron sputtering technique,N doped ZnO films were prepared on quartz substrate with mixture of nitrogen and argon as sputtering gas,and the nitrogen flux was 0,8,20,32 mL/min,respectively .The effects of the nitrogen flux on the structure and properties of N doped ZnO thin films were investigated.It is found that the resistivity of the films increases with the increasing of the nitrogen flux,and the content of NO and (N2)O increases,too.When the nitrogen flux is 8 mL/min ,the deposited film has the best effective doping efficiency of nitrogen.Furthermore,the thickness of ZnO∶N films decreases with the nitrogen flux increasing.