采用金属有机化学气相沉积(MOCVD)方法在Si衬底上进行了ZnO的成核与薄膜生长研究.ZnO薄膜的形貌和结晶特性由成核和后期生长过程共同决定,初期成核温度决定了其尺寸和密度,进而影响后期ZnO主层的生长行为,但由于高温对后期ZnO纳米柱横向生长的抑制,纳米柱的尺寸并没有因为成核尺寸的增大而变大,因此在560 ℃得到了晶柱尺寸最大、密度最小的ZnO薄膜.最后通过改变成核温度,优化了ZnO外延膜的结晶质量.

The nucleation and epitaxial films of ZnO on Si substrates were investigated by metal-organic chemical vapor deposition (MOCVD).As is known to all,the morphology and crystalline quality of ZnO are determined by both the nucleation and epitaxy process.In this paper,the effect of temperature on the growth of ZnO films by MOCVD was investigated in terms of these two processes separately.It is found that the temperature has a great influence on the nucleation process and the following epitaxial growth.Because high temperature has suppression on the lateral growth of ZnO nanorods,the diameters of nanorods dont increase with the ZnO nucleus.As a result,the ZnO nanorods with the largest diameter and lowest density were obtained at 560 ℃.In addition,the crystalline quality of ZnO thin films was further improved by modifying nucleation temperature.