光电子技术, 2015, 35 (1): 70, 网络出版: 2015-04-20
电子束蒸发制备新型非晶半导体MgSnO薄膜
Novel Amorphous MgSnO Thin Films Prepared by E-beam Evaporation Technique
摘要
采用电子束蒸发镀膜工艺制备一种新型非晶半导体MgSnO薄膜。薄膜在可见光区具有较高的透过率,其平均透过率范围在86.14~92.05%,薄膜的光学带隙随着Mg含量的增加而增大。霍尔效应测试表明MgSnO薄膜为n型半导体,Mg含量可在一定程度上控制薄膜的载流子浓度,MgSnO薄膜的载流子迁移率最高为1.59 cm2V-1s-1。
Abstract
Amorphous MgSnO thin films were prepared by e-beam evaporation technique.The films exhibited a high transmittance in the visible region. The average optical transmittance was in the range from 86.14% to 92.05%. The MgSnO thin films were n-type semiconductor. The carrier concentration was controlled by Mg content in the films. The highest Hall mobility of prepared film was 1.59 cm2V-1s-1.
何海英, 偰正才, 罗怡韵, 夏远凤, 牛憨笨. 电子束蒸发制备新型非晶半导体MgSnO薄膜[J]. 光电子技术, 2015, 35(1): 70. HE Haiying, XIE Zhengcai, LUO Yiyun, XIA Yuanfeng, NIU Hanben. Novel Amorphous MgSnO Thin Films Prepared by E-beam Evaporation Technique[J]. Optoelectronic Technology, 2015, 35(1): 70.