对绝缘层上Si/应变Si1-xGex/Si异质结p-MOSFET电学特性进行二维数值分析, 研究了该器件的阈值电压特性、转移特性、输出特性.模拟结果表明, 随着应变Si1-xGex沟道层中的Ge组分增大, 器件的阈值电压向正方向偏移, 转移特性增强; 当偏置条件一定时, 漏源电流的增长幅度随着Ge组分的增大而减小; 器件的输出特性呈现出较为明显的扭结现象.

A two-dimension numerical analysis for the electrical characteristics of Si/strained Si1-xGex/Si hetero-junction-on-insulator p-MOSFET has been complished. The characteristics of the threshold voltage, transfer and output were studied. The results indicate that the value of the threshold voltage has a positive offset and the transfer characteristics are improved with increase of Ge content. The growth rate of the drain-source current becomes lower with the increase of Ge content under a fixed bias voltage on the device, compained by obvious kink in the output characteristics.