红外与毫米波学报, 2015, 34 (2): 218, 网络出版: 2015-05-20
1053 nm高速超辐射发光二极管的研制及其光电特性
Preparation and photoelectric characteristics of high speed superluminescent diode emitting at 1053 nm
摘要
制备了一种新型的具有高调制带宽的1053nm超辐射发光二极管(SLD).利用光荧光(PL)测试分析了不同温度、不同生长速率对SLD芯片外延材料质量的影响, 优化了InGaAs/GaAs量子阱的生长温度与生长速率.分析了SLD模块的光电特性随温度与注入电流的变化关系.研究结果表明, SLD输出波长随温度的漂移系数为0.35nm/℃, 其输出波长随注入电流的漂移对温度并不敏感.在25℃、100mA注入电流下SLD的-3dB调制带宽达到1.7GHz, 尾纤输出功率2.5mW, 相应的光谱半宽为24nm, 光谱波纹为0.15dB.
Abstract
A high speed 1053nm superluminescent diode (SLD) with ridge-waveguide structure has been fabricated. By optimizing of the growth parameters such as temperature, growth rate, epitaxial materials with excellent crystal quality were attained. The photoelectric characteristics of the SLD depended on temperature and driver current were analyzed. The coefficient of the wavelength shift with temperature was 0.35nm/℃.The wavelength of the SLD shift with driver current insensitive to the temperature. A -3dB cutoff frequency of 1.7GHz was obtained at a DC bias current of 100mA and 25℃,corresponding to 2.5mW output power from single mode fiber (SMF) with spectral modulation of less than 0.15dB and spectral width of 24nm.
段利华, 张淑芳, 周勇, 张靖, 郭洪, 罗庆春, 方亮. 1053 nm高速超辐射发光二极管的研制及其光电特性[J]. 红外与毫米波学报, 2015, 34(2): 218. DUAN Li-Hua, ZHANG Shu-Fang, ZHOU Yong, ZHANG Jing, GUO Hong, LUO Qing-Chun, FANG Liang. Preparation and photoelectric characteristics of high speed superluminescent diode emitting at 1053 nm[J]. Journal of Infrared and Millimeter Waves, 2015, 34(2): 218.