光电技术应用, 2015, 30 (2): 37, 网络出版: 2015-05-20
InGaN基高压LED和传统大功率LED的发光效率比较
Comparison of Luminous Efficiency of InGaN-based High-voltage LED with Traditional High Power LED
高压LED 传统大功率LED 发光效率 电流密度 结温 high-voltage light-emitting diode (LED) traditional high power (THP) LED luminous efficiency current density junction temperature
摘要
主要从三个不同角度探究并分析了基于InGaN材料的高压LED的发光效率优于传统大功率LED的原因。为了保证实验结论的可靠性, 文中所采用的实验样品具有相同的芯片尺寸和材料以及相同的封装结构。经过大量的实验证明, 更均匀的电流分布和小芯片间隙的出光, 使得高压LED的发光效率优于传统大功率LED。结果显示, 在相同的1 W输入功率下, 高压LED的发光效率比传统大功率LED高大约4.5%。
Abstract
The reasons of the luminous efficiency of InGaN-based high-voltage light-emitting diode (HV-LED) better than that of traditional high power (THP) LED are researched and analyzed from three different aspects. The experimental sample with same chip size, material and package structure is adopted to ensure the reliability of experiment conclusions. Experiments show that the luminous efficiency of HV-LED is better than that of THP LED for uniformer current distribution and the light from the microchip gap. The results show that the luminous efficiency of HV-LED is approximately 4.5% higher than that of THP-LED under 1 W input power.
姚琦, 林思棋, 郭自泉, 陈国龙, 张纪红, 吕毅军. InGaN基高压LED和传统大功率LED的发光效率比较[J]. 光电技术应用, 2015, 30(2): 37. YAO Qi, LIN Si-qi, GUO Zi-quan, CHEN Guo-long, ZHANG Ji-hong, LV Yi-jun. Comparison of Luminous Efficiency of InGaN-based High-voltage LED with Traditional High Power LED[J]. Electro-Optic Technology Application, 2015, 30(2): 37.
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