设计了一种用于研究在电阻阵像素单元中使用过驱动技术的电路结构。与 国外过驱动技术的实现方式相比，该方式采用开环控制形式，省去了系统闭环计算和查 表环节，节省了系统资源，改善了系统的实时性。该电 路结构是通过分析过驱动技术原理而设计的，能满足对电阻阵微桥电阻热响应时间t1、过驱动因子Kod和温度动态范围的研究 要求，而且符合像素单元面积的限制条件，其Kod在1～1.5的范围内是可调的。对该电路进行了仿真、版 图设计，并请华润上华公司(CSMC)用0.5m工艺进行了流片，最后用搭建的测试系统对该电路的功能进行了验证。 结果表明，该电路的过驱动因子符合设计要求。

A circuit structure for studying the use of overdrive technology in pixel units of a resistor array is designed. Compared with the implementation methods of overdrive technologies of foreign countries, this method adopts an open-loop control form. It can remove the steps of closed-loop calculation and table look-up, save system resources and improve the real-time performance of the system. The circuit structure is designed after analyzing the principle of the overdrive technology. It can meet the requirements for studying the thermal response time t1, overdrive factor Kod and dynamic range of temperature of a micro-bridge of the resistor array. In addition, it conforms to the area constraint of a pixel unit. Its Kod is tunable in the range from 1 to 1.5. After simulation and layout design are carried out, the circuit is manufactured in the 0.5 m process by CSMC foundry. Finally, the function of the circuit is verified by a special test system established. The result shows that the factor Kod of the circuit meets the design requirement.