蓝宝石具有高耐磨性、高硬度、高熔点及化学性能稳定等特点, 是重要的光学元件和半导体衬底材料, 广泛应用于工业、**和科研等领域。传统的机械加工易产生裂纹、碎片和刀具易磨损等问题, 化学刻蚀法的加工效率又较低。因此采用波长为1 064 nm的纳秒脉冲红外激光, 以CuSO4溶液作为工作液, 对激光诱导背面湿式刻蚀蓝宝石技术进行了加工工艺研究, 并利用共聚焦显微镜对激光加工后蓝宝石沟槽表面的形貌尺寸进行检测。同时通过单因素实验法研究了脉冲激光能量与扫描速度、重复次数、刻蚀液浓度以及液膜厚度对划槽尺寸和划槽质量的影响规律。实验表明使用20%的饱和CuSO4溶液, 在0.5~0.9 J/mm的线密度能量下8次扫描, 并使用430～1 400 μm的液层厚度有利于提高激光诱导液相沉积量, 加大激光划切深度, 获得质量较好的划槽。

Sapphire has many advantages including high hardness, high melting point, high wearing resistance and good chemical stability. It is an important commercial substrate for optical elements and the semiconductor materials. And it has been widely used in industry, military and high-tech fields. However, traditional mechanical methods have the disadvantages of cracking, fragments and tool abrasion, and the efficiency of chemical etching is also low. In this paper, a 1 064 nm nanosecond pulse laser will be used to study the laser-induced backside wet etching sapphire substrates technological rule under CuSO4 solution. And the micro-morphology of the etching kref will be studied with the Laser Scanning Confocal Microscope. The single factor method is applied to study the technological rule under different laser pulse energy, scanning velocity, scanning numbers, solution concentration and solution film thickness. The experiment results indicate that saturated CuSO4 solution, laser energy linear density of 0.5～0.9 J/mm with the scanning numbers of 8 under and the solution thickness of 400 ～1 400 μm can increase the laser etching depth and have high quality kerf.