半导体光电, 2015, 36 (1): 38, 网络出版: 2015-06-25
980nm垂直腔面发射激光器的外延生长
Epitaxial Growth of 980nm Vertical Cavity Surface Emitting Laser
摘要
模拟了垂直腔面发射激光器(VCSEL)的反射谱和量子阱增益谱, 采用金属有机物化学气相沉积设备外延生长了980nm的垂直腔面发射激光器, 制作了氧化孔径为14μm的内腔式氧化限制型VCSEL器件, 其阈值电流为3.3mA, 阈值电压为1.8V, 斜率效率为0.387W/A, 室温直流电流为22.8mA时, 输出光功率为5mW。
Abstract
In this paper, simulated were the reflectance spectrum and the quantum well gain of vertical cavity surface emitting lasers (VCSEL). And high quality epitaxial wafers of 980nm VCSEL were grown by metal-organic chemical vapor deposition (MOCVD). A kind of intracavity oxide restricted VCSEL device with the oxide aperture of 14μm was fabricated in later process. The indexes of the device are obtained as: the threshold current of 3.3mA, the threshold voltage of 1.8V, the slope efficiency of 0.387W/A, and the output optical power of 5mW under DC 22.8mA at room temperature.
崔明, 韩军, 邓军, 李建军, 邢艳辉, 陈翔, 朱启发. 980nm垂直腔面发射激光器的外延生长[J]. 半导体光电, 2015, 36(1): 38. CUI Ming, HAN Jun, DENG Jun, LI Jianjun, XING Yanhui, CHEN Xiang, ZHU Qifa. Epitaxial Growth of 980nm Vertical Cavity Surface Emitting Laser[J]. Semiconductor Optoelectronics, 2015, 36(1): 38.
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