使用蓝、绿、红超薄发光层结构来制备荧光型非掺杂白光器件,其器件结构为ITO/MoO3(5 nm)/TCTA(40 nm)/C545T(1 nm)/TCTA(2 nm)/BePP2(1 nm)/Bphen(2 nm)/DCJTB(1 nm)/Bphen(30 nm)/LiF(1 nm)/Al(1 000 nm).白光器件的最大发光亮度和电流效率分别为16 154.73 cd/m2和11.58 cd/A.在电压为 7 V时,器件的色坐标为(0.322 2,0.335 1),而且色坐标在大的电压变化范围内的变化值仅为(0.017 4,0.002 9). 与掺杂结构的白光器件相比,超薄发光层结构的白光器件拥有高的电流效率和稳定的电致发光光谱,原因是超薄发光层结构的载流子捕获效应能使激子有效限制在复合区域内.

Fluorescent nondoped white organic light-emitting diodes (WOLEDs) were fabricated by using three ultrathin layers,including red,green and blue,separately monochromatic emission layers.The structure of the device is ITO/MoO3(5 nm)/TCTA(40 nm)/C545T(1 nm)/TCTA(2 nm)/BePP2(1 nm)/Bphen(2 nm)/DCJTB(1 nm)/Bphen(30 nm)/LiF(1 nm)/Al(1 000 nm).The maximum luminance and current efficiency reach 16 154.73 cd/m2 and 11.58 cd/A,respectively.The Commissions Internationale De LEclairage (CIE) coordinates at (0.322 2,0.335 1) are observed at 7 V bias and show a very slight variation of (0.017 4,0.002 9) in a wide range of voltages.Compared with doped white structure device,ultrathin structure white device has high current efficiency and stable electroluminescence spectrum,which is attribute to the excitons being confined effectively in the recombination zone by the charge trapping effect of ultrathin layers.