半导体光电, 2015, 36 (3): 369, 网络出版: 2015-07-10  

基于NPB和Bphen的有机紫外探测器件的性能研究

Study on the Performance of Organic Ultraviolet Photodetector Based on NPB and Bphen
作者单位
1 吉林师范大学 环境科学与工程学院, 吉林 四平 136000
2 吉林师范大学 环境友好材料制备与应用教育部重点实验室, 吉林 四平 136000
3 江苏大学 化学化工学院, 江苏 镇江 212000
摘要
有机紫外光探测器(Organic Ultraviolet Photodetector,OUV-PD)因质量轻、柔性和成本低等优点已引起广泛关注.以m-MTDATA、NPB和Bphen分别为空穴注入层、给体和受体制备了OUV-PD.器件结构为:ITO/m-MTDATA/NPB/Bphen/LiF/Al,通过优化给受体层的厚度,实现了器件的最优性能.当NPB厚度为60nm、Bphen厚度为90nm时器件性能最佳,在光照强度为1.05mW/cm2、波长为365nm的紫外光照射下,最大响应度为131mA/W.同时,结合材料特点和器件结构讨论了工作机理.
Abstract
Organic ultraviolet photodetector (OUV-PD) has attracted board attention due to light quality,flexibility,low cost,etc.In this paper,OUV-PDs were fabricated by using m-MTDATA,NPB and Bphen as the hole inject layer,donor and acceptor,respectively.The OUV-PDs with the structure of ITO/m-MTDATA/NPB/Bphen/LiF/Al were fabricated,and by optimizing the thicknesses of m-MTDATA layer,optimal performance of the devices was ahcieved.It is indicated that when the thickness of NPB and Bphen is 60 and 90nm,a maximum response of 131mA/W can be obtained under an illumination of 365nm UV light with the power of 1.05mW/cm2.The working mechanism of the OUV-PD is also discussed in terms of the performance and device structures.

苏斌, 张欣馨, 刘春波, 车广波, 刘书宇. 基于NPB和Bphen的有机紫外探测器件的性能研究[J]. 半导体光电, 2015, 36(3): 369. SU Bin, ZHANG Xinxin, LIU Chunbo, CHE Guangbo, LIU Shuyu. Study on the Performance of Organic Ultraviolet Photodetector Based on NPB and Bphen[J]. Semiconductor Optoelectronics, 2015, 36(3): 369.

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