半导体光电, 2015, 36 (3): 408, 网络出版: 2015-07-10
非晶ZSO透明导电薄膜的P-MBE制备
Fabrication of ZSO Transparent Conductive Thin Films by P-MBE
摘要
采用射频等离子体辅助分子束外延技术(P-MBE),在石英玻璃基片上制备了高纯度的透明导电ZSO薄膜,利用X射线衍射、原子力显微镜、Hall测试仪和光谱测量等表征技术,研究了射频功率对ZSO的结晶性能、表面形貌、电学参数及透射率等的影响.研究结果表明,在室温350W离化气源功率下,非晶态ZSO薄膜表面平整度高,室温电子迁移率达11.47cm2·V-1·s-1,电阻率为1.497Ω·cm,光学禁带宽度为3.53eV.分析得出,采用此工艺制备的非晶ZSO透明导电薄膜,具有优良的光电性能,是制备透明导电薄膜晶体管的优良宽禁带半导体材料.
Abstract
High purity ZSO transparent conductive thin films were fabricated on quartz substrates by plasma-assisted P-MBE.The effects of radio-frequency power on the crystalline phases,the morphology,the photoelectric performance and transmissivity were characterized with XRD,AFM and Hall measurement.Test results indicate that under the 350W ionized power at room temperature,the amorphous ZSO films own high flat surface,a high electron mobility of 11.47cm2·V-1·s-1 and a low resistivity of 1.497Ω·cm and the optical Eg of ZSO films is 3.53eV.
徐博, 岳超, 盛拓, 张怡宇. 非晶ZSO透明导电薄膜的P-MBE制备[J]. 半导体光电, 2015, 36(3): 408. XU Bo, YUE Chao, SHENG Tuo, ZHANG YiYu. Fabrication of ZSO Transparent Conductive Thin Films by P-MBE[J]. Semiconductor Optoelectronics, 2015, 36(3): 408.
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