采用化学气相沉积法在硅衬底上生长二氧化锡(SnO2)纳米线,并对其进行热处理.扫描电子显微镜、X射线衍射仪和拉曼光谱测试分析表明所合成的SnO2纳米线为单一四方金红石相,且结晶性能良好.光致发光测试显示在576nm附近有明显的黄色发光峰,但在氧气氛环境退火处理后该发光峰逐渐减弱,表明576nm处的发光峰为氧空位缺陷引起的发光.同时,退火处理能有效提高材料的场发射性能,SnO2纳米线的最低开启和阈值电场分别约为4.6和6.2V/μm.

Tin oxide (SnO2) nanowires were synthesized on silicon substrate using chemical vapor deposition method.Scanning electron microscopy,X-ray diffraction and Raman spectrum analysis reveal that the as-synthesized SnO2 nanowires exhibit single crystalline in tetragonal rutile structure.Photoluminescence spectra of SnO2 nanowires show a strong emission peaked at 576nm.However,the 576nm emission gradually decreases with the increase of oxygen concentration during the thermal annealing,indicating the oxygen-related emission.Furthermore,the field emission properties of SnO2 nanowires get enhanced after annealing.The lowest turn-on and threshold field are 4.6 and 6.2V/μm,respectively.