Yb:KGW 激光晶体可用半导体抽运获得瓦级输出，这是由于其本身具备宽的增益带宽(24 nm)，大的激光发射截面(2.8×10-20 cm2)，以及良好的热导性能(3.3 W/m·K)。Yb:KGW 调Q 激光器通过透射式新型可饱和吸收材料拓扑绝缘体Bi2Se3实现，获得窄脉宽为1.5 μs, 中心波长1042 nm，对应脉冲能量为4.7 μJ，峰值功率为3.13 W。

Yb:KGW laser material is well suited to build diode-pumped pulse lasers in watt region because of its broad gain bandwidth of 24 nm, large emission cross section of 2.8×10- 20 cm2 and good thermal conductivity of 3.3 W/(m·K). A passively Q- switched Yb:KGW laser is obtained using a transmission- type topological insulator Bi2Se3 as a saturable absorber. The achieved maximum pulse energy is 4.7 μJ and the peak power is 3.13 W for a pulse duration of 1.5 μs.