为了获得适用于非线性差频法产生太赫兹波的双波长半导体激光器，设计并利用普通光刻技术制备了一种双波长高阶光栅分布布拉格反射(DBR)激光器。这种DBR 激光器是在条宽为100 μm 的光波导上，制备了一组周期为9.5 μm，沟槽宽度为1.36 μm，光栅长度为100 μm 的高阶光栅结构，实现高功率连续双波长激射，短波长光模式的边模抑制比大于35 dB，长波长光模式的边模抑制比为39 dB，光谱半峰全宽均为0.04 nm，双波长间隔大于0.58 nm，适用于光混频产生太赫兹波。注入电流1.2 A 时，实现了单边88 mW 的高功率激射。提出了一种可实现高功率双波长激光输出的高阶光栅DBR 激光器结构，为双波长半导体激光器的大规模生产提供了一种新方法。

In order to obtain an optical beat source for THz generation, a dual- wavelength distributed Bragg reflection (DBR) semiconductor laser with high order Bragg gratings (HOBGs) is designed. The DBR laser is fabricated by ultraviolet lithography technology with strip width of 100 μm, grating period of 9.5 μm and grating groove width of 1.36 mm. High power continuous-wave dual-wavelength lasing is obtained at injection current from 0.9 A to 1.2 A and the side mode suppression ratios of short wavelength mode and long wavelength mode are larger than 35 dB and 39 dB, respectively. The 3 dB spectrum full width at half maximum of the two wavelength modes are both 0.04 nm. The wavelength difference of two lasing modes is larger than 0.58 nm, which is appropriate for an optical beat source for THz generation. When the injection current is 1.2 A, the output power of HOBGs DBR laser is up to 88 mW from one cavity facet. A kind of high power dual-wavelength HOBGs DBR laser is propsed, which provides a new solution for dual-wavelength semiconductor laser to mass production.