光学学报, 2015, 35 (s1): s114001, 网络出版: 2015-07-27   

25 Gb/s单片集成电吸收调制分布反馈激光器

25Gb/s Electroabsorption Modulator Monolithically Integrated with Distributed Feedback Laser
作者单位
中国科学院半导体研究所半导体材料科学重点实验室, 北京 100083
摘要
采用选区外延生长应变InGaAsP/InGaAsP多量子阱有源层,制备出带宽为25 Gb/s的单片集成电吸收调制分布反馈激光器。激光器区和调制器区的荧光光谱波长分别为1535 nm和1497 nm,偏调约为38 nm。利用全息技术在激光器区制备光栅,集成器件激射在1549 nm波长处,器件的阈值电流为18 mA,在100 mA直流电流下出光功率大于10 mW。器件工作在单模状态,边模抑制比大于40 dB,与单模光纤耦合后测得的静态消光比为23 dB,器件的3 dB响应带宽为16 GHz。调制器偏压为-1.7 V,峰峰值电压为3.5 V,在25 Gb/s非归零伪随机二进制码(215-1)调制下测得器件的背靠背眼图清晰张开,动态消光比大于5.7 dB。器件具有低成本、高带宽的特点,是下一代光纤通信网络的理想光源。
Abstract
A 25 Gb/s InGaAsP/InGaAsP multi-quantum wells electro-absorption modulator monolithically integrated with distributed feedback laser is fabricated by selective area growth. The photoluminescence wavelength variation is 38 nm between the laser area wavelength λPL of 1535 nm and modulator area wavelength λPL of 1497 nm. The grating is fabricated at the laser region by holographic lithograph technology. The threshold current of thip lasers is 18 mA and the power is over 10 mW at 100 mA with wavelength of 1549 nm. The side-mode suppression ratio is over 40 dB. Extinction ratio is 23 dB by coupling light into the single mode fiber. The 3 dB-bandwidth of 16 GHz has been measured. A 25 Gb/s eye diagram is measured with a 3.5 V non-return to zero (NRZ) pseudorandom modulation signal at -1.9 V bias. A clearly opening eye-diagram with a dynamic extinction ratio of 5.7 dB has been obtained. This laser is appropriate for next generation of optical fiber transmission systems for its high bandwidth and low cost.

周代兵, 边静, 安欣, 王宝军, 张瑞康, 赵玲娟, 吉晨, 王圩. 25 Gb/s单片集成电吸收调制分布反馈激光器[J]. 光学学报, 2015, 35(s1): s114001. Zhou Daibing, Bian Jing, An Xin, Wang Baojun, Zhang Ruikang, Zhao Lingjuan, Ji Chen, Wang Wei. 25Gb/s Electroabsorption Modulator Monolithically Integrated with Distributed Feedback Laser[J]. Acta Optica Sinica, 2015, 35(s1): s114001.

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