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大功率高光束质量1060 nm大光腔非对称波导半导体激光二极管

High Power High Beam Quality 1060-nm Large Optical Cavity Asymmetric Waveguide Semiconductor Laser Diode

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摘要

设计并制备了大功率高光束质量的1060 nm 波长的非对称波导半导体激光二极管.本激光二极管包含压应变InGaAs/GaAs双量子阱和GaAs/AlGaAs分别限制结构。为提高激光二极管的大功率性能,设计激光器二极管的垂直结构具有小快轴远场发散角,大光斑面积及低腔面光能密度,低光腔内吸收损耗和高内量子效率等性能。通过引入4 μm厚弱光限制Al0.1Ga0.9As波导,激光器二极管的远场发散角降到20°,光斑宽度增到接近1 μm。量子阱位置偏调后得到的薄上波导层非对称波导结构可以使激光二极管即使在大电流注入时也能保持高的内量子效率。根据以上设计,分别制备了50 μm 宽条和窄条脊波导激光二极管。2 mm 腔长的宽条激光二极管得到1.3 W连续光功率。单模脊波导激光器的直流光功率为600 mW。

Abstract

High power high beam quality 1060-nm InGaAs/GaAs quantum well (QW) semiconductor laser diode with an asymmetric large optical cavity (LOC) is designed and fabricated. The laser diode consists of compressively strained double InGaAs/GaAs quantum wells and a GaAs/AlGaAs separate confinement structure. To improve the high power performance, the transversal optical cavity is optimized to have low fast axis far-field divergence angle, large optical spot size and low facet optical density, low internal optical absorption loss and high internal quantum efficiency. By employing a weak optical confinement Al0.1Ga0.9As waveguide with thickness of 4 μm, a low transversal far-field divergence angle of 20° and large optical spot size near 1 μm are obtained. By detuning the QW position, the asymmetric waveguide with thinner p-side waveguide enables the laser diode high internal quantum efficiency even in high current injection level. Based on the optimization, 1.3 W continue wave optical power is achieved for broad area lasers with cavity length and strip width of 2 mm and 50 μm, respectively. For single spatial mode ridge waveguide laser diodes with same cavity length, 600 mW continue wave optical power is obtained at 10 ℃.

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中图分类号:TN 248.4

DOI:10.3788/aos201535.s114006

所属栏目:激光器与激光光学

责任编辑:宋梅梅  信息反馈

基金项目:国家自然科学基金( 61274046, 61201103)

收稿日期:2015-01-10

修改稿日期:2015-02-20

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谭少阳:中国科学院半导体研究所, 北京 100083
王皓:中国科学院半导体研究所, 北京 100083
张瑞康:中国科学院半导体研究所, 北京 100083
陆丹:中国科学院半导体研究所, 北京 100083
王圩:中国科学院半导体研究所, 北京 100083
吉晨:中国科学院半导体研究所, 北京 100083

联系人作者:谭少阳(tanshy10@semi.ac.cn)

备注:谭少阳(1987-),男,博士研究生,主要从事GaAs基大功率半导体激光器及集成THz波发生器方面的研究。

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引用该论文

Tan Shaoyang,Wang Hao,Zhang Ruikang,Lu Dan,Wang Wei,Ji Chen. High Power High Beam Quality 1060-nm Large Optical Cavity Asymmetric Waveguide Semiconductor Laser Diode[J]. Acta Optica Sinica, 2015, 35(s1): s114006

谭少阳,王皓,张瑞康,陆丹,王圩,吉晨. 大功率高光束质量1060 nm大光腔非对称波导半导体激光二极管[J]. 光学学报, 2015, 35(s1): s114006

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