利用氟化钇(YF3)代替LiF作为电子注入层材料,以金属铝作为阴极,制备了有机电致发光器件(OLED)。实验结果表明: 适当厚度的YF3 电子注入缓冲层可以增强阴极的电子注入能力,使得电子和空穴的浓度更加平衡,有效地提高器件的电致发光性能。其中,1.2 nm厚YF3的器件具有最小的起亮电压2.6 V,最高的电流效率8.52 cd·A-1,最大的亮度36 530 cd·m-2。最大亮度和电流效率与LiF参考样品相比,分别提高了39%和53%。

Organic light emitting devices (OLEDs) were fabricated with yttrium fluoride (YF3) as the electron injection layer instead of lithium fluoride (LiF) and aluminum as the cathode. The experiment results show that YF3 injection buffer layer with appropriate thickness can effectively enhance the electron injection ability of the cathode, leading to more balanced concentration of electrons and holes, and optimized electroluminescent properties of OLEDs. The device with 1.2 nm-thick YF3 layer has the minimum turn-on voltage of 2.6 V, the maximum current efficiency of 8.52 cd·A-1, and the maximum luminance of 36 530 cd·m-2. Compared with LiF reference sample, the maximum brightness and current efficiency are increased by 39% and 53%, respectively.