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MOS器件的超短脉冲激光辐照效应

Radiation Effects of MOS Device at Uultra-short Laser

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摘要

电荷耦合器件(CCD)的高敏感性使其易受到激光脉冲的干扰甚至损伤。在理论分析了影响MOS结构光生电荷量因素的基础上, 数值仿真了MOS器件的光生电荷量以及响应电压和电流随激光脉宽和平均功率变化的关系; 实验研究了CCD对不同参数激光脉冲的光电响应特性。数值仿真表明, MOS器件的光生电荷量以及峰值响应电压和电流随激光脉冲的平均功率和脉宽的增大而增大, 并且响应电压和电流有拖尾现象。实验结果显示, 脉冲越短, CCD的响应阈值越低。研究结论对超短脉冲激光在光电成像方面的应用具有一定的意义。

Abstract

CCD(Charge Coupled Devices) is easily disturbed or dammed by laser because of high sensitivity. Based on the analyzing the factors that induce electric charges, the principles of MOS device were presented. The quantity of electric charges of MOS was simulated and the relationships of current and voltage in different laser pulse width and average power were studied. The experiment was carried out to investigate the characteristics of photoelectricity response at different laser parameters. Simulation results show that the charges of MOS device and the peak value of current and voltage increase as the average power or pulse width of laser increase accordingly. Meanwhile, the delay of current and voltage are displayed. The outcome of experiment reveals that the response threshold decreases when laser pulse width decreases correspondingly. The conclusions have certain significance to the application of ultrashort pulse in optical imaging.

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中图分类号:TN24

所属栏目:光电器件

收稿日期:2014-10-10

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作者单位    点击查看

张玉发:电子工程学院 脉冲功率激光技术国家重点实验室, 合肥 230037
孙晓泉:电子工程学院 脉冲功率激光技术国家重点实验室, 合肥 230037

联系人作者:张玉发(zyf9180@163.com)

备注:张玉发(1983-), 男, 安徽桐城人, 博士生, 讲师, 主要从事激光防御方面的研究。

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【2】王金宝.激光辐照可见光面阵Si-CCD探测器实验研究[D]. 长沙: 国防科学技术大学, 2003.
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【3】刘长安, 陈金宝, 马金龙, 等.红外激光对可见光 CCD 成像系统的干扰[J]. 强激光与粒子束, 2010, 22(8): 1727-1730.
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【4】蔡跃, 叶锡生.170ps激光脉冲辐照可见光面阵Si-CCD的实验[J]. 光学精密工程, 2011(2): 457-462.
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【5】Joachim Piprek.Semiconductor Optoelectronic Devives[M]. Pittsburgh: Academic Press, 2003.

【6】孙承伟, 陆启生.激光辐照效应[M] 北京: 国防工业出版社, 2002.
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引用该论文

ZHANG Yufa,SUN Xiaoquan. Radiation Effects of MOS Device at Uultra-short Laser[J]. Semiconductor Optoelectronics, 2015, 36(4): 565-568

张玉发,孙晓泉. MOS器件的超短脉冲激光辐照效应[J]. 半导体光电, 2015, 36(4): 565-568

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