在采用柴式(Czochralski, CZ)法生长重掺砷(As)单晶硅的过程中，掺杂剂—— As具有较强的蒸发性。 为了有效抑制As蒸发对单晶硅电阻率的影响，需要测定As的蒸发速率常数。通过实验测量 给出了晶体样块中As浓度随蒸发时间的变化曲线，然后对实验曲线进行了线性回归分析，得到了 重掺As单晶硅制备中As的蒸发速率常数(1.43×10－4 cm/s)。该结果在实际应用中被验证是正确而有 效的，这对精确控制重掺As单晶硅的电阻率有着重要意义。

In the growth process of heavily arsenic-doped Czochralski silicon crystal, the arsenic dopant has its strong evaporation. To suppress the influence of As evaporation on the resistivity of silicon crystal, the evaporation rate constant of As should be determined. The curve of As concentration in a crystal sample versus evaporation time is given in a measurement experiment. Then, through the linear regression analysis of the experimental curve, the As evaporation rate constant in the growth process of the heavily As-doped silicon crystal (1.43×10－4 cm/s) is obtained. The result is verified to be correct and effective in the practical applications. This is of great significance to the precise control of the resistivity of heavily As-doped silicon crystal.