采用物理气相沉积(PVD)法在ITO透明导电衬底上制备GaSb多晶薄膜.研究了衬底温度及薄膜厚度对GaSb薄膜结构特性、电学特性以及光学特性的影响.在一定条件下生长的GaSb薄膜择优取向由GaSb(111)晶向转变为GaSb(220)晶向, 这是在玻璃衬底上生长GaSb薄膜没有发现的现象.择优取向改变为(220)晶向的GaSb薄膜具有更高的霍尔迁移率.因为这种薄膜材料具有更少的晶粒间界和更少的缺陷.经优化后的GaSb薄膜的光学吸收系数在104 cm-1以上, 适用于热光伏薄膜太阳电池中.

GaSb polycrystalline thin films were prepared on ITO substrate with the method of PVD. By controlling substrate temperatures and thicknesses of GaSb films, surface roughness, grain size, electrical and optical properties were investigated. The preferred orientation of GaSb thin films grown on ITO substrate had changed from GaSb (111) to GaSb (220) under specific growth conditions which had never occurred on glass substrates. GaSb thin films with (220) preferred orientation had higher hall mobility because of less grain boundaries and less defects. The thin films after optimization possess, the absorption coefficients over 104 cm-1, which is desirable in the application of TPV thin film cells.